(11-22) Plane Si-GaN Freestanding GaN Substrate By Hydride Vapor Phase Epitaxy

Product Categories

GaN Wafer [37]
SiC Wafer [44]
GaAs Wafer [23]
InP Wafer [21]
InAs Wafer [19]
InSb Wafer [13]
GaSb Wafer [19]
Germanium Wafer [15]
CdZnTe Wafer [1]
Silicon Wafer [65]
Glass Wafer [1]

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

Contact Now

(11-22) Plane Si-GaN Freestanding GaN Substrate By Hydride Vapor Phase Epitaxy

Contact Now

(11-22) Plane Si-GaN Freestanding GaN Substrate By Hydride Vapor Phase Epitaxy

(11-22) Plane Si-GaN Freestanding GaN Substrate By Hydride Vapor Phase Epitaxy PAM-XIAMEN has established the manufacturing technology for freestanding (Gallium Nitride)GaN substrate wafer which is ...

Product Tags:

gallium nitride wafer

gan on silicon wafer

Send your message to this supplier


*From:	Your email address is incorrect!
*To:	XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
*Subject:	Subject is empty!
*Message:	For the best results, we recommend including the following details: -Self introduction -Required specifications -Inquire about price/MOQ Characters Remaining: (0/3000) Please enter 20 to 3000 characters to contact this supplier!

Friendly Links: www.everychina.com

* Name:

* Phone:

Company:

Country:

: Please reply me within 24 hours.

Yes! I would like your verified suppliers matching service!

Send Inquiry Now