(11-22) Plane Si-GaN Freestanding GaN Substrate By Hydride Vapor Phase Epitaxy
PAM-XIAMEN has established the manufacturing technology for freestanding (Gallium Nitride)GaN substrate wafer which is for UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE) technology,Our GaN substrate has low defect density and less or free macro defect density.
PAM-XIAMEN offers full range of GaN and Related III-N Materials including GaN substrates of various orientations and electrical conductivity,crystallineGaN&AlN templates, and custom III-N epiwafers.
(11-22) Plane Si-GaN Freestanding GaN Substrate
| Item | PAM-FS-GaN(11-22)- SI |
| Dimension | 5 x 10 mm2 |
| Thickness | 350 ±25 µm 430 ±25 µm |
| Orientation | (10-11) plane off angle toward A-axis 0 ±0.5° (10-11) plane off angle toward C-axis -1 ±0.2° |
| Conduction Type | Semi-Insulating |
| Resistivity (300K) | > 106 Ω·cm |
| TTV | ≤ 10 µm |
| BOW | -10 µm ≤ BOW ≤ 10 µm |
| Surface Roughness | Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished. |
| Dislocation Density | From 1 x 10 5to 5 x 10 6cm-2 |
| Macro Defect Density | 0 cm-2 |
| Useable Area | > 90% (edge exclusion) |
| Package | each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room |
(11-22) Plane Si-GaN Freestanding GaN Substrate
PAM-XIAMEN's GaN(Gallium Nitride) substrate is singlecrystal substrate with high quality, which is made with original HVPE method and wafer processing technology. They are high crystalline, good uniformity, and superior surface quality. GaN substrates are used for many kinds of applications, for white LED and LD(violet, blue and green), Furthermore development has progressed for power and high frequency electronic device applications.
GaN technology is used in numerous high-power applications such as industrial, consumer and server power supplies, solar, AC drive and UPS inverters, and hybrid and electric cars. Furthermore, GaN is ideally suited for RF applications such as cellular base stations, radars and cable TV infrastructure in the networking, aerospace and defense sectors,thanks to its high breakdown strength, low noise figure and high linearity.
XRD Rocking Curves-GaN Material-TEST REPORT
A test report is necessary to show the compliance between custom description and our final wafers data. We will test the wafer characerization by equipment before shipment, testing surface roughness by atomic force microscope, type by Roman spectra instrument, resistivity by non-contact resistivity testing equipment,micropipe density by polarizing microscope, orientation by X-ray Orientator etc. if the wafers meet the requirement, we will clean and pack them in 100 class clean room, if the wafers do not match the custom spec, we will take it off.
The half-height full width (FWHM) is an expression of the range of functions given by the difference between two extreme values of the independent variable equal to half of its maximum. In other words, it is the width of the spectral curve measured between those points on the Y-axis, which is half the maximum amplitude.
Below is an example of XRD Rocking Curves of GaN Material:
XRD Rocking Curves of GaN Material
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(11-22) Plane Si-GaN Freestanding GaN Substrate By Hydride Vapor Phase Epitaxy Images
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